- 您現(xiàn)在的位置：買賣IC網 > PDF目錄384504 > IRHNJ58130 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PDF資料下載
參數(shù)資料
| 型號： | IRHNJ58130 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 130K |
| 代理商： | IRHNJ58130 |
www.irf.com
3
Radiation Characteristics
IRHNJ57130, JANSR2N7481U3
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.064 — 0.08
V
GS
= 12V, I
D
=16A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.06 — 0.075
V
GS
= 12V, I
D
=16A
On-State Resistance (SMD-.5)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHNJ57130 ( JANSR2N7481U3 ), IRHNJ53130 ( JANSF2N7481U3 ) and IRHNJ54130 ( JANSG2N7481U3 )
2. Part number IRHNJ58130 ( JANSH2N7481U3 )
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 22A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 100 100 100 100 100
I
59.4
341 32.5 100 100 100 35 25
Au
82.3
350 28.4 100 100 80
LET
Energy Range
V
DS
(V)
25 —
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
V
Br
I
Au
相關PDF資料 |
PDF描述 |
|---|---|
| IRHNJ53230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ54230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ58230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ58Z30 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ593034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNJ58230 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ58Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNJ593034 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNJ593034SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ593034SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。