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參數(shù)資料
| 型號(hào)： | IRHNB4160 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 3） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | IRHNB4160 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
51
32.5
204
300
2.4
±20
500
51
30
7.3
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5 sec)
3.5 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
12/10/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNB7160 100K Rads (Si) 0.040
IRHNB3160 300K Rads (Si) 0.040
IRHNB4160 600K Rads (Si) 0.040
IRHNB8160 1000K Rads (Si) 0.040
51A
51A
51A
51A
For footnotes refer to the last page
SMD-3
Features:
!
Single Event Effect (SEE) Hardened
!
Low R
DS(on)
!
Low Total Gate Charge
!
Proton Tolerant
!
Simple Drive Requirements
!
Ease of Paralleling
!
Hermetically Sealed
!
Ceramic Package
!
Surface Mount
!
Light Weight
PD - 91795A
IRHNB7160
100V, N-CHANNEL
RAD Hard
HEXFET
TECHNOLOGY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNJ3130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ4130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ8130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ7130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNB4260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB4Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) |
| IRHNB7064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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