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參數(shù)資料
| 型號(hào)： | IRHNA7264SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 250V，的Rds（on）\u003d 0.110ohm，身份證\u003d 34A條） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | IRHNA7264SE |
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min. Typ. Max. Units
—
—
Test Conditions
0.42
K/W
RthJ-PCB
Junction-to-PC board
—
TBD
—
soldered to a copper-clad PC board
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
34
136
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
875
12
V
ns
μ
C
T
j
= 25°C, IS = 34A, VGS = 0V
Tj = 25°C, IF = 34A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
250
—
Typ. Max. Units
—
—
—
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
BVDSS
BVDSS/
TJ
V
V/
o
C
RDS(on)
—
—
2.5
4
—
—
—
—
—
—
—
—
0.110
0.123
4.5
—
50
250
VGS = 12V, ID =24A
VGS = 12V, ID = 34A
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 21A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 34A
VDS = Max. Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
185
55
180
35
200
140
75
—
VDD = 125V, ID =34A,
RG = 2.35
LS
Internal Source Inductance
—
6.5
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7800
1250
550
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
IRHNA7264SE Device
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
nA
A
Modified MOSFET
symbol showing the
internal inductances.
Next Data Sheet
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