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參數(shù)資料
| 型號： | IRHM9230 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) |
| 中文描述： | 晶體管P溝道（BVdss \u003d-為200V，的Rds（on）\u003d 0.8ohm，身份證\u003d- 6.5A） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 201K |
| 代理商： | IRHM9230 |
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
-200
—
Typ. Max. Units
—
—
-0.10
—
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
2.2
—
—
—
—
—
—
—
—
0.8
0.92
-4.0
—
-25
-250
VGS = -12V, ID = -4.1A
VGS = -12V, ID = -6.5A
VDS = VGS, ID = -1.0 mA
VDS > -15V, IDS = -6.5A
VDS = 0.8 x Max. Rating,VGS = 0V
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -6.5A
VDS = Max. Rating x 0.5
V
VGS(th)
gfs
IDSS
S ( )
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
-100
100
35
10
25
50
90
90
90
—
VDD = -100V, ID = -6.5A, RG = 2.35
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
310
55
—
—
—
VGS = 0V, VDS = -25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulse Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
—
—
Test Conditions
-6.5
Modified MOSFET symbol
showing the integral Reverse
p-n junction rectifier.
—
—
-26
—
—
—
—
—
—
-5.0
400
3.0
V
ns
μ
C
T
j
= 25°C, IS = -6.5A, VGS = 0V
Tj = 25°C, IF = -6.5A, di/dt
≤
-100 A/
μ
s
VDD
≤
-50V
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
—
—
—
30
1.67
—
IRHM9230 Device
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
Min. Typ. Max. Units
Test Conditions
K/W
Notes: See page 4
A
Next Data Sheet
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