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參數(shù)資料
| 型號： | IRHM9160 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A) |
| 中文描述： | 晶體管P溝道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.087ohm，身份證\u003d- 35 *甲） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 134K |
| 代理商： | IRHM9160 |
Product Summary
Part Number
IRHM9160
BV
DSS
-100V
R
DS(on)
0.087
I
D
-35*A
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Electrically Isolated
I
Ceramic Eyelets
I
I
P-CHANNEL
RAD HARD
Provisional Data Sheet No. PD-9.1415
-100 Volt, 0.087
, RAD HARD HEXFET
International Rectifier’s P-channel RAD HARD tech-
nology HEXFETs demonstrate excellent threshold
voltage stability and breakdown voltage stability at
total radiation doses as high as 10
5
Rads (Si). Under
identical
pre- and post-radiation test conditions, In-
ternational Rectifier’s P-channel RAD HARD HEXFETs
retain
identical
electrical specifications up to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x
10
12
Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect, (SEE),
testing of International Rectifier’s P-channel RAD
HARD HEXFETs has demonstrated virtual immunity
to SEE failure. Since the P-channel RAD HARD pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
P-channel RAD HARD HEXFET transistors also fea-
ture all of the well-established advantages of MOS-
FETs, such as voltage control, very fast switching, ease
of paralleling and temperature stability of the electri-
cal parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Absolute Maximum Ratings
IRHM9160
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Parameter
Continuous Drain Current
IRHM9160
-35*
-22
-140
250
2.0
±20
500
-35
25
-5.5
-55 to 150
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
Weight
g
Notes: See Page 4.
*
ID current limited by pin diameter
Pre-Radiation
o
C
A
Next Data Sheet
Index
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