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參數(shù)資料
| 型號(hào)： | IRHM7460SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 500V及的Rds（on）\u003d 0.32ohm，身份證\u003d 18.8A） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | IRHM7460SE |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
400
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
400
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
—
7
16
27
—
—
—
—
—
—
7
—
—
—
A
2.3
133
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~35
V
DS
Bias
(V)
400
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
500
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
uses two radiation environments.
IRHM7460SE Device
Radiation Characteristics
Table 1. Low Dose Rate
Parameter
IRHM7460SE
100K Rads (Si)
min.
500
2.5
—
—
—
—
Units
Test Conditions
max.
—
4.5
100
-100
50
0.32
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Static Drain-to-Source
On-State Resistance One
V
SD
Diode Forward Voltage
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
=11.9A
nA
μ
A
—
1.8
V
TC = 25°C, IS = 18.8A,V
GS
= 0V
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1, column 1.
The values in Table 1 will be met for either of the two
low dose rate test circuits that are used. Both pre-
and post-radiation performance are tested and speci-
fied using the same drive circuitry and test conditions
in order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 10
5
Rads (Si), no
change in limits are specified in DC parameters.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
To Order
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