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參數(shù)資料
| 型號(hào)： | IRHF57230SE |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) |
| 中文描述： | 抗輻射功率MOSFET的通孔（到39） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 137K |
| 代理商： | IRHF57230SE |
IRHF57230SE, JANSR2N498T2
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 5.3mH
Peak IL = 7.0A, VGS = 12V
ISD
≤
7.0A, di/dt
≤
219A/
μ
s,
VDD
≤
200V, TJ
≤
150°C
Footnotes:
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 09/03
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