參數(shù)資料
型號(hào)： IRGC75B120UB
英文描述： TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
中文描述： 晶體管| IGBT的|正陳| 1.2KV五（巴西）國(guó)際消費(fèi)電子展|芯片
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 19K
代理商： IRGC75B120UB
IRGC75B120UB
www.irf.com
2/14/2000
Die in Wafer Form
Mechanical Data
Electrical Characteristics (Wafer Form)
Description
Guaranteed (min, max)
V
CE (on)
Collector-to-Emitter Saturation Voltage
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
GE(th)
Gate Threshold Voltage
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Die Outline
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4μm)
0.443" x 0.443"
150mm, with std. < 100 > flat
185μm, +/-15μm
01-5378
100μm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Recommended Die Attach Conditions
Parameter
Test Conditions
1.54V min, 1.78V max
1200V min
4.4V min, 6.0V max
30μA max
± 2 μA max
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 750μA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 750μA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
E
C
G
1200V
I
C(nom)
=75A
V
CE(on) typ.
= 3.1V @
I
C(nom)
@ 25°C
UltraFast IGBT
Short Circuit Rated
150mm Wafer
Features
GEN5 Non Punch Through (NPT) Technology
UltraFast
10
μ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benefits
Benchmark Efficiency above 20KHz
Optimized for Welding, UPS, and Induction Heating
Rugged with UltraFast Performance
Excellent Current Sharing in Parallel Operation
11.25
[.443]
9.854
[.388]
EMITTER
1.99
[.078]
9.773
[.385]
LENGTH
1.32
[.052]
> [.0250] TOLERANCE = + /- [.0010]
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
01-5378
G
OVERALL DIE:
WIDTH
&
LENGTH
IS = CURRENTSENSE
SK = SOURCE KELVIN
2. CONTROLLING DIMENSION: [INCH].
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
< 0.635 TOLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE = + /- 0.025
S = SOURCE
G = GATE
3. LETTER DESIGNATION:
4. DIMENSIONAL TOLERANCES:
BONDING PADS:
WIDTH
&
NOTES:
E = EMITTER
PD - 93871
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