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參數(shù)資料
| 型號： | IRFU9024N |
| 廠商： | International Rectifier |
| 英文描述： | CAP 0.22UF 50V 10% X7R SMD-1206 TR-7-PL 3K/REEL |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份證\u003d- 11A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 117K |
| 代理商： | IRFU9024N |
IRFR/U9024N
HEXFET
Power MOSFET
PRELIMINARY
6/26/97
Parameter
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252A A
I-Pak
TO-251AA
l
Ultra Low On-Resistance
l
P-Channel
l
Surface Mount (IRFR9024N)
l
Straight Lead (IRFU9024N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Parameter
Max.
-11
-8
-44
38
0.30
± 20
62
-6.6
3.8
-10
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 9.1506
V
DSS
= -55V
R
DS(on)
= 0.175
I
D
= -11A
S
D
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU9024NCPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET POWER MOSFET |
| IRFU9024NHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 11A 3-Pin(3+Tab) IPAK |
| IRFU9024NPBF | 功能描述:MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU9024PBF | 功能描述:MOSFET P-Chan 60V 8.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU9024TU | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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