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參數(shù)資料
| 型號(hào)： | IRFU2405PbF |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | IRFU2405PBF |
IRFR2405PbF
IRFU2405PbF
HEXFET
Power MOSFET
Seventh Generation HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
56
40
220
110
0.71
± 20
130
34
11
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
V
DSS
= 55V
R
DS(on)
= 0.016
I
D
= 56A
Description
www.irf.com
1
Surface Mount (IRFR2405)
Straight Lead (IRFU2405)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
PD - 95369A
D-Pak
IRFR2405 IRFU2405
I-Pak
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU24N15D | SMPS MOSFET |
| IRFR24N15D | SMPS MOSFET |
| IRFU320 | 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs |
| IRFR320 | 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRFU320 | Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU2407 | 功能描述:MOSFET N-CH 75V 42A I-PAK RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFU2407PBF | 制造商:International Rectifier 功能描述:MOSFET N 75V 42A I-PAK |
| IRFU24N15D | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:SMPS MOSFET |
| IRFU24N15DPBF | 制造商:International Rectifier 功能描述:MOSFET N 150V 24A I-PAK |
| IRFU2605 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A) |
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