參數資料
型號: IRFSL52N15DPBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數: 11/12頁
文件大?。?/td> 349K
代理商: IRFSL52N15DPBF
www.irf.com
11
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
1% Duty cycle, 100 pulses,
limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.72mH
R
G
= 25
, I
AS
= 36A.
I
SD
36A, di/dt
400A/μs, V
DD
V
(BR)DSS
,
T
J
175°C.
Pulse width
300μs; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This is only applied to TO-220AB package.
This is applied to D
2
Pak, when mounted on 1" square PCB
(FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRFB52N15DPbF),
& Industrial (IRFS52N15DPbF/IRFSL52N15DPbF) market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
05/05
TO-220 package is not recommended for Surface Mount Application.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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