參數(shù)資料
型號： IRFSL4310ZPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/11頁
文件大小： 437K
代理商： IRFSL4310ZPBF
2
www.irf.com
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.047mH
R
G
= 25
Ω
, I
AS
= 75A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
75A, di/dt
≤
600A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
θ
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
100
–––
–––
0.11
–––
4.8
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.7
–––
–––
6.0
4.0
20
250
100
-100
–––
V
V/°C
m
Ω
V
μ
A
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
R
G
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
Ω
Min. Typ. Max. Units
150
–––
–––
120
–––
29
–––
35
–––
85
–––
20
–––
60
–––
55
–––
57
–––
6860
–––
490
–––
220
570
–––
920
–––
170
–––
S
nC
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
pF
Diode Characteristics
Symbol
I
S
Parameter
Continuous Source Current
Min. Typ. Max. Units
–––
–––
127
A
(Body Diode)
Pulsed Source Current
I
SM
–––
–––
560
A
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
40
49
58
89
2.5
1.3
V
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 85V,
I
F
= 75A
di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
nC
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
–––
A
I
D
= 75A
R
G
= 2.7
Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 80V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 10V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
V
DD
= 65V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250
μ
A
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150
μ
A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
=50V
Conditions
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
相關PDF資料
PDF描述
IRFS4410ZPBF HEXFET Power MOSFET
IRFSL4410ZPBF HEXFET Power MOSFET
IRFS9N60APBF SMPS MOSFET
IRFS9N60A SMPS MOSFET
IRFSL9N60A SMPS MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRFSL4321PBF 功能描述:MOSFET MOSFT 150V 83A 15mOhm 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4410 功能描述:MOSFET N-CH 100V 96A TO-262 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRFSL4410PBF 功能描述:MOSFET MOSFT 100V 96A 10mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4410ZPBF 功能描述:MOSFET MOSFT 100V 97A 9mOhm 83nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFSL4510PBF 功能描述:MOSFET N CH 100V TO262 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*