參數(shù)資料
型號： IRFS11N50ATRR
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 11A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道|第11A條（?。﹟對263AB
文件頁數(shù)： 2/9頁
文件大?。?/td> 151K
代理商： IRFS11N50ATRR
IRFS11N5OA
Static @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Parameter
Min. Typ. Max. Units
500
–––
–––
0.060 –––
–––
–––
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
0.52
4.0
25
250
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Parameter
Min. Typ. Max. Units
6.1
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
35
–––
32
–––
28
–––
1423
–––
208
–––
8.1
–––
2000
–––
55
–––
97
Conditions
V
DS
= 50V, I
D
= 6.6A
I
D
= 11A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 11A
R
G
= 9.1
R
D
= 22
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
52
13
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
pF
I
GSS
I
DSS
Drain-to-Source Leakage Current
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
275
11
17
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
510
3.4
1.5
770
5.1
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
11
44
A
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
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IRFS11N50ATRRPBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
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