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參數(shù)資料
| 型號(hào)： | IRFR9310 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d-為400V，的Rds（on）\u003d 7.0ohm，身份證\u003d- 1.8A） |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 116K |
| 代理商： | IRFR9310 |
IRFR/U9310
HEXFET
Power MOSFET
PRELIMINARY
7/30/97
Parameter
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252A A
I-Pak
TO-251AA
l
P-Channel
l
Surface Mount (IRFR9310)
l
Straight Lead (IRFU9310)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
Parameter
Max.
-1.8
-1.1
-7.2
50
0.40
± 20
92
-1.8
5.0
-24
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD 9.1663
S
D
G
V
DSS
= -400V
R
DS(on)
= 7.0
I
D
= -1.8A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU9310 | Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
| IRFS11N50A | SMPS MOSFET |
| IRFS31N20DPBF | HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A ) |
| IRFSL31N20DPBF | HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A ) |
| IRFS3207PBF | HEXFET㈢Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR9310PBF | 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9310TR | 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9310TRA | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| IRFR9310TRL | 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9310TRLA | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
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