參數(shù)資料
型號: IRFR9220
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A)
中文描述: 功率MOSFET(減振鋼板基本\u003d-為200V,的Rds(on)\u003d 1.5ohm,身份證\u003d- 3.6A)
文件頁數(shù): 3/8頁
文件大?。?/td> 99K
代理商: IRFR9220
4-91
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
P
T
C
, CASE TEMPERATURE (
o
C)
-2
-4
-1
0
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-3
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.01
10
0.1
1
Z
θ
J
,
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
-20
-10
-1
-0.1-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
μ
s
10ms
100ms
DC
V
DSS
MAX = -200V
1ms
-500
T
C
= 25
o
C
T
J
= MAX RATED
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
-50
t, PULSE WIDTH (s)
I
D
,
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-1
I
I25
150
-------125
T
C
=
T
C
= 25
o
C
IRFR9220, IRFU9220
相關PDF資料
PDF描述
IRFU9220 Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A)
IRFRU3910 Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)
IRFR3910 RECT SCHOTTKY 60V 5A POWERMITE3
IRFU3910 RECTIFIER SCHOTTKY SINGLE 5A 60V 100A-Ifsm 0.66Vf 0.2A-IR POWERMITE-3 5K/REEL
IRFRU5505 30V N-Channel PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRFR9220PBF 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9220T_R4941 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9220TR 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9220TRL 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9220TRLPBF 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube