參數(shù)資料
型號(hào)： IRFM054
英文描述： N-Channel Power MOSFET(Vdss:60V,Id(cont):35A,Rds(on):0.027Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:60V,Id(cont):35A,Rds(on):0.027Ω))
中文描述： N溝道功率MOSFET（減振鋼板基本：60V的，身份證（續(xù)）：35A條的Rds（on）：0.027Ω）（不適用馬鞍山溝道功率場(chǎng)效應(yīng)管（減振鋼板基本：60V的，身份證（續(xù)）：35A條的Rds（on） ：0.027Ω））
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 15K
代理商： IRFM054
IRFM054
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/94
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
I
D
= 1mA
V
GS
= 10V
I
D
= 35A
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
I
D
= 250
μ
A
I
DS
= 35A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 35A
V
DS
= 0.5BV
DSS
V
DD
= 30V
I
D
= 35A
R
G
= 2.35
I
S
= 35A
V
GS
= 0
I
F
= 35A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
60
0.68
0.027
2
4
20
25
250
100
–100
4600
2000
340
12
80
20
34
180
45
105
33
180
100
100
35*
220
2.5
280
2.2
Negligible
8.7
8.7
V
V/°C
V
(
)
S
(
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width
≤
300
μ
s,
δ ≤
2%
*
I
S
Current limited by pin diameter.
Notes
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
相關(guān)PDF資料
PDF描述
IRFM054 N-CHANNEL POWER MOSFET
IRFM110 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1.5A I(D) | SOT-223
IRFM150D TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 34A I(D) | TO-254VAR
IRFM150U TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 34A I(D) | TO-254VAR
IRFM150 N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFM054D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR
IRFM054SCV 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk
IRFM054SCX 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk
IRFM054U 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR
IRFM064 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 35A TO-254AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:60V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No
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