參數(shù)資料
型號(hào): IRFI644G
廠商: VISHAY SILICONIX
元件分類(lèi): JFETs
英文描述: 7.9 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220, FULLPAK-3
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 1398K
代理商: IRFI644G
Document Number: 91151
www.vishay.com
S-81290-Rev. A, 16-Jun-08
5
IRFI644G, SiHFI644G
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Pulse width
≤ 1 s
Duty factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
G
IAS
0.01
Ω
tp
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
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