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參數(shù)資料
| 型號(hào)： | IRFG9110 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET THRU-HOLE (MO-036AB) |
| 中文描述： | 功率MOSFET的通孔（莫- 036AB） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 218K |
| 代理商： | IRFG9110 |
IRFG9110
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction to Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
17
90
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
-0.75
-3.0
-5.5
200
9.0
Test Conditions
—
—
—
—
—
V
nS
μc
T
j
= 25°C, IS = -0.75A, VGS = 0V
Tj = 25°C, IF = -0.75A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.098
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
-2.0
0.67
—
—
—
— 1.73
VGS = -10V, ID = -0.75A
— -4.0 V VDS = VGS, ID = -250μA
—
—
S (
)
VDS > -15V, IDS = -0.5A
—
-25
—
-250
VGS = 0V, TJ = 125°C
—
-100
—
100
—
15
VGS = -10V, ID= -0.75A
—
7.0
nC
—
8.0
—
30
VDD = -50V, ID = -0.75A
—
60
VGS = -10V, RG =7.5
—
40
—
40
10
—
nH
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
1.4
VGS = -10V, ID = -0.5A
VDS= -80V, VGS= 0V
VDS = -80V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS = -20V
VGS =20V
VDS = -50V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
200
85
30
VGS = 0V, VDS = -25V
f = 1.0MHz
—
—
pF
nA
ns
μ
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
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