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參數(shù)資料
| 型號： | IRFE9120 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| 中文描述： | 的HEXFET三極管表面貼裝（持有LCC - 18） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 138K |
| 代理商： | IRFE9120 |
IRFE9120
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
—
—
—
— 26
" " "
Soldered to a copper clad PC board
9.1
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
-3.5
-14
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-4.8
200
3.1
V
nS
μc
T
j
= 25°C, IS = -3.5A, VGS = 0V
Tj = 25°C, IF =-3.5A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.10
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID =-1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
1.25
—
—
—
— 0.69
VGS =-10V, ID =-3.5A
— -4.0 V VDS = VGS, ID =250μA
—
—
S (
)
VDS >-15V, IDS =-2.2A
—
-25
—
-250
VGS = 0V, TJ = 125°C
—
-100
—
100
—
16.3
—
4.7
nC
—
9.0
—
60
—
100
—
50
—
70
6.1
—
nH
Measured from the center of
drain pad to center of source
pad
0.60
VGS =-10V, ID = -2.2A
VGS(th)
gfs
IDSS
VDS=-80V, VGS=0V
VDS =-80V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS = -20V
VGS = 20V
VGS =-10V, ID= -3.5A
VDS =-50V
VDD =- -50V, ID =-3.5A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
380
170
45
VGS = 0V, VDS = -25V
f = 1.0MHz
—
—
pF
nA
n s
μ
A
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