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參數(shù)資料
| 型號(hào)： | IRFBL18N50K |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(SMPS)(HEXFET 功率MOS場(chǎng)效應(yīng)管(用于開(kāi)關(guān)模式電源)) |
| 中文描述： | HEXFET功率MOSFET（開(kāi)關(guān)電源）（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管（用于開(kāi)關(guān)模式電源）） |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | IRFBL18N50K |
IRFB18N50K
www.irf.com
3
PROVISIONAL
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
LEAD ASSIG NM ENTS
1 - GATE
2 - DRAIN
3 - SOU RC E
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
N OTES:
1 D IMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 C ONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLU DE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFE220 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| IRFE420 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| IRFE9024 | 60V, P-CHANNEL |
| IRFE9120 | HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| IRFI540N | Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFBL3703 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Synchronous Rectification in High Power High Frequency DC/DC Converters |
| IRFC014B | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 60V - Bulk |
| IRFC014R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP |
| IRFC024B | 制造商:Vishay Semiconductors 功能描述:MOSFET N-CHANNEL 60V - Bulk |
| IRFC024R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP |
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