參數(shù)資料
型號(hào)： IRFBC20L
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 600V電壓的Rds（on）\u003d 4.4ohm，身份證\u003d 2.2a在）
文件頁數(shù)： 2/10頁
文件大?。?/td> 355K
代理商： IRFBC20L
IRFBC20S/L
V
DD
=50V, starting T
J
= 25°C, L =31mH
R
G
= 25
, I
AS
= 2.2A. (See Figure 12)
I
SD
≤
2.2A, di/dt
≤
40A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRFBC20 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.0A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
290
0.67
1.6
580
1.3
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
Parameter
Min. Typ. Max. Units
600
–––
–––
0.88
–––
–––
2.0
–––
1.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
–––
23
–––
30
–––
25
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
=1mA
V
GS
=10V, I
D
= 1.3A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 1.3A
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 2.0A
V
DS
= 360V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 300V
I
D
= 2.0A
R
G
= 18
R
D
= 150
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
4.4
4.0
–––
100
500
100
-100
18
3.0
8.9
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
350
48
8.6
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
2.2
8.0
S
D
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFBC20LPBF 功能描述:MOSFET N-Chan 600V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFBC20PBF 功能描述:MOSFET N-Chan 600V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFBC20S 功能描述:MOSFET N-Chan 600V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFBC20S/LPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRFBC20SPBF 功能描述:MOSFET N-Chan 600V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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