- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384493 > IRFBA90N20D (International Rectifier) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A) PDF資料下載
參數(shù)資料
| 型號： | IRFBA90N20D |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.023ohm，身份證\u003d第98A） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 98K |
| 代理商： | IRFBA90N20D |
IRFBA90N20D
Super-220
Package Outline
8
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤
59A, di/dt
≤
170A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Notes:
Starting T
J
= 25
°
C, L = 0.55mH
R
G
= 25
, I
AS
= 59A.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR
’
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
09/01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFBC20L | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) |
| IRFBC20S | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) |
| IRFBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) |
| IRFBC30A | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) |
| IRFBC30S | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFBA90N20DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA |
| IRFBA90N20DPBF | 功能描述:MOSFET MOSFT 200V 98A 23mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC20 | 功能描述:MOSFET N-Chan 600V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC20L | 功能描述:MOSFET N-Chan 600V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC20LPBF | 功能描述:MOSFET N-Chan 600V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。