參數(shù)資料
型號(hào)： IRFBA1405
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 5.0mohm，身份證\u003d 174A章）
文件頁(yè)數(shù)： 9/9頁(yè)
文件大?。?/td> 238K
代理商： IRFBA1405
IRFBA1405P
www.irf.com
9
Super-220 Package Outline
LEAD ASSIGNMENTS
MOSFET
2 - DRAIN
3 - SOURCE
1 - GATE
4 - DRAIN
4 - COLLECTOR
3 - EMITTER
2 - COLLECTOR
1 - GATE
IGBT
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.11mH
R
G
= 25
, I
AS
= 101A. (See Figure 12).
I
SD
≤
101A, di/dt
≤
210A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.Refer to AN-1001
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
2X
A
1
2
3
3X
0.25 [.010]
B A
B
4X
4
0.25 [.010]
B A
3.00 [.118]
2.50 [.099]
14.50 [.570]
13.00 [.512]
4.00 [.157]
3.50 [.138]
1.30 [.051]
2.55 [.100]
1.00 [.039]
0.70 [.028]
5.00 [.196]
4.00 [.158]
11.00 [.433]
10.00 [.394]
1.50 [.059]
0.50 [.020]
15.00 [.590]
14.00 [.552]
9.00 [.354]
8.00 [.315]
13.50 [.531]
12.50 [.493]
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO J EDEC OUTLINE TO-273AA.
NOTES:
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101]
market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
3/01
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFBA1405P 功能描述:MOSFET N-CH 55V 174A SUPER-220 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFBA1405PPBF 功能描述:MOSFET MOSFT 55V 174A 5mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFBA1405PPBF-ND 制造商: 功能描述: 制造商:undefined 功能描述:
IRFBA22N50 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)
IRFBA22N50A 功能描述:MOSFET N-Chan 500V 24 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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