參數(shù)資料
型號(hào): IRFB3207
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 10/11頁(yè)
文件大?。?/td> 385K
代理商: IRFB3207
10
www.irf.com
(Dimensions are shown in millimeters (inches))
RECTIFIER
LOGO
INTERNATIONAL
LOT CODE
ASSEMBLY
YEAR 0 = 2000
WEEK 02
DATE CODE
P = PRODUCT (OPTIONAL)
PART NUMBER
F530S
A = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
ASSEMBLY
position indicates "Lead-Free"
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
Note: "P" in assembly line
LOT CODE 8024
THIS IS AN IRF530S WITH
LINE L
WEEK 02
YEAR 0 = 2000
DATE CODE
PART NUMBER
F530S
OR
相關(guān)PDF資料
PDF描述
IRFS3207 HEXFET Power MOSFET
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IRFB33N15D Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)
IRFS33N15D Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)
IRFSL33N15D Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFB3207HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 180A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 75V 180A 3PIN TO-220AB - Rail/Tube
IRFB3207PBF 功能描述:MOSFET MOSFT 75V 180A 4.5mOhm 180nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3207PBF 制造商:International Rectifier 功能描述:MOSFET
IRFB3207ZGPBF 功能描述:MOSFET MOSFT 75V 170A 4.1mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3207ZPBF 功能描述:MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube