- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384493 > IRFAC42 (HARRIS SEMICONDUCTOR) 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFAC42 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 5.4 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 67K |
| 代理商： | IRFAC42 |
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFAC40
600
600
6.2
3.9
25
±
20
125
1.0
570
-55 to 150
IRFAC42
600
600
5.4
3.4
22
±
20
125
1.0
570
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3) (Figures 15, 16) . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 10)
600
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
-
-
250
μ
A
On-State Drain Current (Note 4)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON) MAX
, V
GS
= 10V
IRFAC40
6.2
-
-
μ
A
IRFAC42
5.4
-
-
μ
A
Gate to Source Leakage
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 3.4A (Figures 8, 9)
IRFAC40
-
0.97
1.2
IRFAC42
-
1.2
1.6
Forward Transconductance (Note 4)
g
fs
V
DS
≥
50V, I
D
= 3.4A (Figure 12)
4.7
70
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 0.5V x Rated BV
DSS
, I
D
≈
6.2A, R
G
=
9.1
, R
L
= 47
, V
GS
= 10V (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
13
20
ns
Rise Time
t
r
-
18
27
ns
Turn-Off Delay Time
t
d(OFF)
-
55
83
ns
Fall Time
t
f
-
20
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 6.2A, V
DSS
= 0.8 x Rated
BV
DSS
, I
G(REF)
= 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
40
60
nC
Gate to Source Charge
Q
gs
-
5.5
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
20
-
nC
IRFAC40, IRFAC42
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFAE40 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| IRFAF50 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| IRFAG40 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| IRFAG50 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| IRFB11N50 | 30 AMP MINIATURE POWER RELAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFAC42R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA |
| IRFAC50 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFAE20 | 制造商:International Rectifier 功能描述: |
| IRFAE22 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.8A I(D) | TO-204AA |
| IRFAE30 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 800V 3.1A 3-Pin(2+Tab) TO-204AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 800V 3.1A 2PIN TO-204AA - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 800V, 3.1A, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。