參數(shù)資料
型號： IRF9630
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： CAP 4.3PF 50V +/-0.25PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ
中文描述： 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 4/7頁
文件大?。?/td> 63K
代理商： IRF9630
4-30
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
-100
-1
100
μ
s
10
μ
s
DC
1ms
10ms
100ms
-10
-1
-0.1
-1000
-10
-100
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
I
D
,
0
-10
-20
-30
-40
-3
-6
-9
-12
-15
-50
-9V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
V
GS
= -10V
V
GS
= -8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-4
0
-2
-4
-6
-10
-8
-12
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-16
-8
-20
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
V
GS
= -7V
V
GS
= -9V
V
GS
= -8V
V
GS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-4
-6
-8
-10
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-9
-12
I
D
,
-15
-6
-3
-125
o
C
25
o
C
-55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
1.6
-5
-10
-15
-20
I
D
, DRAIN CURRENT (A)
-25
2.0
0
0.4
0.8
1.2
V
GS
= -10V
V
GS
= -20V
r
D
,
R
)
2.5
1.5
1.0
0.5
040
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.0
80
N
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
IRF9630, RF1S9630SM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF9630_R4941 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9630L 功能描述:MOSFET P-CH 200V 6.5A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF9630PBF 功能描述:MOSFET P-Chan 200V 6.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9630PBF 制造商:International Rectifier 功能描述:MOSFET
IRF9630S 功能描述:MOSFET P-Chan 200V 6.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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