參數(shù)資料
型號(hào)： IRF9620
廠商： International Rectifier
英文描述： CAP CERAMIC 4PF 50V C0G 0402
中文描述： 功率MOSFET（減振鋼板基本\u003d-為200V，的Rds（on）\u003d 1.5ohm，身份證\u003d- 3.5A的）
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 58K
代理商： IRF9620
4-24
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
I
D
,
-100
-100
-1
-10
-1
-0.1
-1000
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
BY r
DS(ON)
AREA IS LIMITED
10
μ
s
100
μ
s
1ms
10ms
100ms
DC
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-1
-2
-3
-4
-5
-50
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
0
V
GS
= -9V
V
GS
= -10V
V
GS
= -8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-1
0
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-3
-5
-2
-3
I
D
,
-4
-4
-5
V
GS
= -10V
V
GS
= -9V
V
GS
= -4V
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-5
-4
-3
-2
-1
0
0
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
V
DS
≥
I
D(ON)
x r
DS(ON)
MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
3
4
8
12
16
r
D
,
I
D
, DRAIN CURRENT (A)
20
4
0
1
2
V
GS
= -20V
PULSE DURATION = 2
μ
s
V
GS
= -10V
5
O
)
N
2.5
1.5
1.0
0.5
0
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
120
2.0
80
V
GS
= -10V, I
D
= -1.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
O
IRF9620
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF9620_R4941 功能描述:MOSFET TO-220AB P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9620L 功能描述:MOSFET P-CH 200V 3.5A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF9620PBF 功能描述:MOSFET P-Chan 200V 3.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9620S 功能描述:MOSFET P-Chan 200V 3.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9620SPBF 功能描述:MOSFET P-Chan 200V 3.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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