參數(shù)資料
型號(hào)： IRF9540NSTRL
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
中文描述： 功率MOSFET（減振鋼板基本\u003d- 100V的，的Rds（on）\u003d 0.117ohm，身份證\u003d- 23A條）
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 59K
代理商： IRF9540NSTRL
4-16
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9540,
RF1S9540SM
-100
-100
-19
-12
-76
±
20
150
1
960
-55 to 175
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= -250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= -250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= -10V
V
GS
=
±
20V
I
D
= -10A, V
GS
= -10V (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON) MAX
, I
D
= -6A
(Figure 12)
V
DD
= -50V, I
D
≈
19A, R
G
= 9.1
,
R
L
=
2.3
,
V
GS
= -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-100
-
-
V
Gate to Threshold Voltage
-2
-
-4
V
μ
A
μ
A
A
Zero Gate Voltage Drain Current
-
-
-25
-
-
-250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
-19
-
-
Gate to Source Leakage Current
-
-
±
100
0.200
nA
S
Drain to Source On Resistance (Note 2)
-
0.150
Forward Transconductance (Note 2)
5
7
-
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
-
16
20
ns
Rise Time
-
65
100
ns
Turn-Off Delay Time
-
47
70
ns
Fall Time
-
28
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= -10V, I
D
= -19A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
70
90
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
14
-
nC
Gate to Drain “Miller” Charge
-
56
-
nC
Input Capacitance
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
1100
-
pF
Output Capacitance
-
550
-
pF
Reverse Transfer Capacitance
-
250
-
pF
Internal Drain Inductance
Measured From the
Contact Screw on Tab to
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to the Center of
Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Package to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
1
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Typical Socket Mount
-
-
62.5
L
S
L
D
G
D
S
IRF9540, RF1S9540SM
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IRF9540 Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF9540NSTRLHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 23A 3PIN D2PAK - Tape and Reel
IRF9540NSTRLPBF 功能描述:MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9540NSTRR 功能描述:MOSFET P-CH 100V 23A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF9540NSTRRPBF 功能描述:MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9540PBF 功能描述:MOSFET -100V Single P-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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