參數(shù)資料
型號(hào)： IRF830A
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 8/8頁(yè)
文件大?。?/td> 141K
代理商： IRF830A
8
www.irf.com
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9B 1M
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
5.0A, di/dt
≤
370A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Starting T
J
= 25°C, L = 18mH
R
G
= 25
, I
AS
= 5.0A. (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 3/03
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF830AL 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF830ALPBF 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF830APBF 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF830AS 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF830ASPBF 功能描述:MOSFET N-Chan 500V 5.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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