參數(shù)資料
型號(hào)： IRF7526D1
廠商： International Rectifier
英文描述： FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
中文描述： FETKY⑩MOSFET的
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 120K
代理商： IRF7526D1
IRF7526D1
2
www.irf.com
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-30
–––
–––
0.17 0.20
–––
0.30 0.40
-1.0
–––
0.94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.5
–––
1.3
–––
2.5
–––
9.7
–––
12
–––
19
–––
9.3
–––
180
–––
87
–––
42
Conditions
–––
V
V
GS
= 0V, I
D
= -250μA
V
GS
= -10V, I
D
= -1.2A
V
GS
= -4.5V, I
D
= -0.60A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -0.60A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -1.2A
V
DS
= -24V
V
GS
= -10V, See Fig. 6
V
DD
= -15V
I
D
= -1.2A
R
G
= 6.2
R
D
= 12
,
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-1.0
-25
-100
100
11
1.9
3.7
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
I
GSS
μA
nA
ns
Parameter
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
30
–––
37
Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
-1.25
-9.6
-1.2
45
55
V
ns
nC
T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.2A
di/dt = 100A/μs
A
Parameter
Max. Units
1.9
1.3
120
11
Conditions
I
F(av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
See Fig. 14
T
A
= 70°C
Following any rated
I
SM
Max. peak one cycle Non-repetitive
Surge current
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Parameter
Max. Units
0.50
0.62
0.39
0.57
0.06
16
92
3600 V/μs Rated V
R
Conditions
V
FM
Max. Forward voltage drop
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C.
V
R
= 30V
mA
I
RM
Max. Reverse Leakage current
T
J
= 25°C
T
J
= 125°C
C
t
dv/dt
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Schottky Diode Electrical Specifications
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7526D1PBF 功能描述:MOSFET 20V FETKY-30V MOSFET 200mOhms 7.5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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