參數(shù)資料
型號(hào): IRF7456
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 20V的,的Rds(on)最大值\u003d 0.0065ohm,身份證\u003d 16A條)
文件頁數(shù): 6/8頁
文件大?。?/td> 165K
代理商: IRF7456
IRF7456
6
www.irf.com
Fig 13.
On-Resistance Vs. Gate Voltage
Fig 12.
On-Resistance Vs. Drain Current
Fig 13a&b.
Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b.
Unclamped Inductive Test circuit
and Waveforms
Fig 14c.
Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(B R)D SS
I
AS
RG
IAS
0.01
t
p
D.U.T
L
VDS
+
DRIVER
A
15V
20V
0
20
40
60
80
100
ID , Drain Current (A)
0.0046
0.0050
0.0054
0.0058
0.0062
RD
)
VGS = 10V
VGS = 4.5V
0
4
8
12
16
VGS, Gate -to -Source Voltage (V)
0.004
0.006
0.008
0.010
0.012
RD
)
ID = 16A
25
50
75
100
125
150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E
A
ID
7.2A
10A
16A
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
IRF7457 Power MOSFET(Vdss=20V, Rds(on)max=7.0mohm, Id=15A)
IRF7458 Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
IRF7459PBF HEXFET Power MOSFET
IRF7459 Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A)
IRF7460 Power MOSFET(Vdss=20V, Id=12A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7456HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 16A 8-Pin SOIC
IRF7456PBF 功能描述:MOSFET 20V DUAL N-CH HEXFET 6.5mOhms 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7456TR 制造商:International Rectifier 功能描述:
IRF7456TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R
IRF7456TRPBF 功能描述:MOSFET MOSFT 20V 16A 6.5mOhm 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube