參數(shù)資料
型號: IRF7403
廠商: International Rectifier
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件頁數(shù): 9/9頁
文件大?。?/td> 116K
代理商: IRF7403
IRF7403
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
4.10 (.161)
3.90 (.154)
1.60 (.062)
1.50 (.059)
1.85 (.072)
1.65 (.065)
5.30 (.208)
5.10 (.201)
5.55 (.218)
5.45 (.215)
2.60 (.102)
1.50 (.059)
6.50 (.255)
6.30 (.248)
8.10 (.318)
7.90 (.311)
FEED DIR EC TION
TERM IN AT ION
NU MBER 1
2.05 (.080)
1.95 (.077)
0.35 (.013)
0.25 (.010)
12.30 (.484)
11.70 (.461)
2.20 (.086)
2.00 (.079)
15.40 (.607)
11.90 (.469)
2
50.00
(1.969)
M IN .
18.40 (.724)
M AX
3
14.40 (.566)
12.40 (.448)
3
330.00
(13.000)
M AX.
13.20 (.519)
12.80 (.504)
N OTES:
1 C ONF ORM S TO EIA-481-1
2 IN CLUD ES F LANG E DISTOR TION @ O UTER EDGE
3 D IMEN SIO NS M EASU RED @ HU B
4 C ONT ROLLIN G D IM EN SION : M ETRIC
1
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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參數(shù)描述
IRF7403_04 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRF7403HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 8.5A 8SOIC - Rail/Tube
IRF7403PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 22mOhms 38nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7403TR 功能描述:MOSFET N-CH 30V 8.5A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF7403TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC T/R