參數(shù)資料
型號(hào)： IRF7353D1PBF
廠商： International Rectifier
英文描述： FETKY⑩ MOSFET / Schottky Diode
中文描述： FETKY⑩MOSFET的/肖特基二極管
文件頁數(shù)： 2/8頁
文件大?。?/td> 144K
代理商： IRF7353D1PBF
IRF7353D1PbF
2
www.irf.com
Parameter
V
(BR)DSS
R
DS(on)
Min. Typ. Max. Units
30
—
—
0.023 0.032
—
0.032 0.046
1.0
—
—
14
—
—
—
—
—
—
—
—
—
22
—
2.6
—
6.4
—
8.1
—
8.9
—
26
—
17
—
650
—
320
—
130
Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
—
V
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.7A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 24V, I
D
= 5.8A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
V
GS
= 20V
V
GS
= -20V
I
D
= 5.8A
V
DS
= 24V
V
GS
= 10V (see figure 8)
V
DD
= 15V
I
D
= 1.0A
R
G
= 6.0
R
D
= 15
V
GS
= 0V
V
DS
= 25V
= 1.0MHz (see figure 7)
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
—
—
1.0
25
100
-100
33
3.9
9.6
12
13
39
26
—
—
—
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
μA
nA
ns
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Min. Typ.
Max.
2.5
30
1.0
68
87
Units
A
Conditions
Continuous Source Current (Body Diode) —
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
—
—
0.78
45
58
—
—
—
—
V
ns
nC
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/μs
Parameter
Max. Units.
2.7
1.9
120
11
Conditions
I
F(av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
See Fig. 14
T
A
= 70°C
Following any rated
I
SM
Max. peak one cycle Non-repetitive
Surge current
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
Schottky Diode Maximum Ratings
Schottky Diode Electrical Specifications
Parameter
V
FM
Max. Forward voltage drop
Max. Units
0.50
0.62
0.39
0.57
0.06
16
92
3600 V/ μs Rated V
R
Conditions
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 30V
I
RM
Max. Reverse Leakage current
T
J
= 25°C
T
J
= 125°C
C
t
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
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參數(shù)描述
IRF7353D1TR 功能描述:MOSFET N-CH 30V 6.5A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF7353D1TRPBF 功能描述:MOSFET MOSFT w/Schttky 30V 6.5A 32mOhm 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7353D2 功能描述:MOSFET N-CH 30V 6.5A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF7353D2PBF 功能描述:MOSFET 30V FETKY 20 VBRD 29mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7353D2PBFTR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R
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