參數資料
型號： IRF6785MTRPBF
廠商： International Rectifier
英文描述： DIGITAL AUDIO MOSFET
中文描述： 數字音頻MOSFET的
文件頁數： 2/9頁
文件大?。?/td> 614K
代理商： IRF6785MTRPBF
IRF6785MTRPbF
2
www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.94mH, R
G
= 25
, I
AS
= 8.4A.
Surface mounted on 1 in. square Cu board.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.22
85
–––
–––
–––
–––
–––
–––
Max.
–––
–––
100
5.0
20
250
100
-100
3.0
Units
V
V/°C
m
V
μA
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
V
GS(th)
I
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
R
G(int)
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Min.
8.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
26
6.3
1.3
6.9
11.5
8.2
6.2
8.6
7.2
14
1500
160
31
1140
69
140
Max.
–––
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
V
DS
= 100V
V
GS
= 10V
I
D
= 4.2A
See Fig. 6 and 17
nC
ns
pF
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max.
19
Units
I
S
A
I
SM
–––
–––
27
V
SD
t
rr
Q
rr
–––
–––
–––
–––
71
190
1.3
–––
–––
V
ns
nC
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 160V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 160V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 4.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.2A, V
DD
= 25V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.2A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DD
= 100V
I
D
= 4.2A
R
G
= 6.0
Conditions
V
DS
= 10V, I
D
= 4.2A
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