參數(shù)資料
型號: IRF6727MPBF
廠商: International Rectifier
英文描述: DirectFET Power MOSFET
中文描述: DirectFET功率MOSFET
文件頁數(shù): 2/9頁
文件大?。?/td> 259K
代理商: IRF6727MPBF
2
www.irf.com
Pulse width
400μs; duty cycle
2%.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
22
1.22
1.84
1.8
-6.5
–––
–––
–––
–––
–––
49
12
5.3
16
16
21.3
28
1.5
21
31
24
16
6190
1280
610
Max. Units
–––
–––
1.7
2.4
2.35
–––
1.0
150
100
-100
–––
74
–––
–––
–––
–––
–––
–––
2.5
–––
–––
–––
–––
–––
–––
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
nC
See Fig. 15
nC
ns
pF
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max. Units
110
I
S
A
I
SM
–––
–––
260
V
SD
t
rr
Q
rr
–––
–––
–––
0.77
27
45
1.0
41
68
V
ns
nC
di/dt = 250A/μs
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
T
J
= 25°C, I
F
= 25A
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 25A
V
DS
= V
GS
, I
D
= 100μA
V
GS
= 4.5V
I
D
= 25A
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
I
D
= 25A
R
G
= 1.8
See Fig. 17
V
DD
= 15V, V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 32A
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 25A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= 15V
MOSFET symbol
Conditions
V
DS
= 16V, V
GS
= 0V
相關(guān)PDF資料
PDF描述
IRF6727MTRPbF DirectFET Power MOSFET
IRF6775MTRPBF DIGITAL AUDIO MOSFET
IRF6785MTRPBF DIGITAL AUDIO MOSFET
IRF7101PBF HEXFET㈢ Power MOSFET
IRF7103IPBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6727MPBF_09 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET
IRF6727MTR1PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 1.7mOhms 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6727MTRPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 1.7mOhms 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6727MTRPBF_09 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET
IRF6728MTR1PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 2.5mOhms 28nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube