參數(shù)資料
型號(hào)： IRF6665
廠商： International Rectifier
英文描述： DIGITAL AUDIO MOSFET
中文描述： 數(shù)字音頻MOSFET的
文件頁數(shù)： 2/8頁
文件大?。?/td> 229K
代理商： IRF6665
IRF6665
2
www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.89mH, R
G
= 25
, I
AS
= 5.0A.
Surface mounted on 1 in. square Cu board.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Based on testing done using a typical device & evaluation board
at Vbus=±45V, f
SW
=400KHz, and T
A
=25°C. The delta case
temperature
T
C
is 55°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.12
53
–––
–––
–––
–––
–––
1.9
Max.
–––
–––
62
5.0
20
250
100
-100
2.9
Units
V
V/°C
m
V
μA
V
(BR)DSS
V
(BR)DSS
/
T
J
R
DS(on)
V
GS(th)
I
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
R
G(int)
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Min.
6.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
8.7
2.1
0.58
2.8
3.2
3.38
7.4
2.8
14
4.3
530
110
29
510
67
130
Max.
–––
11.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
V
DS
= 50V
V
GS
= 10V
I
D
= 5.0A
See Fig.6 and 16
nC
ns
pF
Units
mJ
A
Min.
–––
Typ.
–––
Max.
4.2
Units
A
–––
–––
34
–––
–––
–––
–––
31
37
1.3
–––
–––
V
ns
nC
V
GS
= 20V
V
GS
= -20V
Max.
11
5.0
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
DD
= 50V
I
D
= 5.0A
R
G
= 6.0
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.0A, V
DD
= 25V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
Typ.
–––
–––
Conditions
V
DS
= 10V, I
D
= 5.0A
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