參數(shù)資料
型號(hào): IRF5852
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=20V)
中文描述: 功率MOSFET(減振鋼板基本\u003d 20V的)
文件頁數(shù): 2/9頁
文件大?。?/td> 239K
代理商: IRF5852
IRF5852
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 0.96A, V
GS
= 0V
T
J
= 25°C, I
F
= 0.96A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
25
6.5
1.2
38
9.8
V
ns
nC
Source-Drain Ratings and Characteristics
A
11
–––
–––
–––
0.96
–––
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
400μs; duty cycle
2%.
Surface mounted on FR-4 board, t
5sec.
Parameter
Min. Typ. Max. Units
20
–––
––– 0.016 –––
–––
––– 0.090
–––
––– 0.120
0.60
–––
5.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
–––
0.95
–––
0.88
–––
6.6
–––
1.2
–––
15
–––
2.4
–––
400
–––
48
–––
32
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 2.7A
V
GS
= 2.5V, I
D
= 2.2A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 2.7A
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
V
GS
= 12V
V
GS
= -12V
I
D
= 2.7A
V
DS
= 16V
V
GS
= 4.5V
V
DD
= 10V
I
D
= 1.0A
R
G
= 6.2
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
1.25
–––
1.0
25
100
-100
6.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
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