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參數(shù)資料
| 型號： | IRF5850 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-20V, Rds(on)=0.135ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 20V的，的Rds（on）\u003d 0.135ohm） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 126K |
| 代理商： | IRF5850 |
IRF5850
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -0.96A, V
GS
= 0V
T
J
= 25°C, I
F
= -0.96A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
23
7.7
-1.2
35
12
V
ns
nC
Source-Drain Ratings and Characteristics
A
-9.0
–––
–––
–––
-0.96
–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
Parameter
Min. Typ. Max. Units
-20
–––
––– 0.011 –––
–––
––– 0.135
–––
––– 0.220
-0.45 –––
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6
–––
0.66
–––
0.83
–––
8.3
–––
14
–––
31
–––
28
–––
320
–––
56
–––
40
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.5V, I
D
= -1.9A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -2.2A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
V
GS
= 12V
I
D
= -2.2A
V
DS
= -10V
V
GS
= -4.5V
V
DD
= -10V
I
D
= -1.0A
R
G
= 6.0
V
GS
= -4.5V
V
GS
= 0V
V
DS
= -15V
= 1.0kHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
-1.2
–––
-1.0
-25
-100
100
5.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
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