參數(shù)資料
型號(hào)： IRF2804S-7P
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 263K
代理商： IRF2804S-7P
2
www.irf.com
S
D
G
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.049mH, R
G
= 25
, I
AS
= 160A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
SMD
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
40
–––
–––
2.0
220
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.028
–––
1.2
1.6
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
170
260
63
–––
71
–––
17
–––
150
–––
110
–––
105
–––
4.5
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
6930
1750
970
5740
1570
2340
–––
–––
–––
–––
–––
–––
pF
Min.
–––
Typ. Max. Units
–––
320
A
–––
–––
1360
–––
–––
–––
–––
43
48
1.3
65
72
V
ns
nC
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 160A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 160A
T
J
= 25°C, I
F
= 160A, V
DD
= 20V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 160A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 10V
MOSFET symbol
Conditions
R
G
= 2.6
I
D
= 160A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 160A
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