參數(shù)資料
型號: IRF1310NS
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 100V的,的Rds(on)\u003d 0.036ohm,身份證\u003d 42A條)
文件頁數(shù): 4/10頁
文件大?。?/td> 156K
代理商: IRF1310NS
IRF1310NS/L
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
20
40
60
80
100
120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
22A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
1000
0.2
0.4
V ,Source-to-Drain Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
I
S
V = 0 V
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
o
o
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
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