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參數(shù)資料
| 型號： | IRCZ24 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.040ohm，身份證\u003d 26A條） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 145K |
| 代理商： | IRCZ24 |
C-2
IRCZ24
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60
–––
––– 0.061 –––
–––
–––
2.0
–––
5.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
59
–––
25
–––
38
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 10A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 17A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 17A
R
G
= 18
R
D
= 1.7
,
See Fig. 10
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
0.10
4.0
–––
25
250
100
-100
24
6.3
9.0
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
L
D
Internal Drain Inductance
–––
4.5
–––
L
C
Internal Source Inductance
–––
7.5
–––
C
iss
C
oss
C
rss
r
C
oss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Current Sensing Ratio
Output Capacitance of Sensing Cells
–––
–––
–––
740
–––
720
360
75
–––
14
–––
–––
–––
820
–––
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
D
= 17A, V
GS
= 10V
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
pF
–––
pF
nH
Between lead,
6 mm (0.25 in.)
from package
and center of
die contact
Drain-to-Source Leakage Current
I
DSS
I
GSS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
87
0.29 0.60
1.5
180
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
68
–––
–––
17
A
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 0.024mH
R
G
= 25
, I
AS
= 17A. (See Figure 12)
I
SD
≤
17A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRCZ24-007 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-220VAR |
| IRCZ24-008 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-220VAR |
| IRCZ24PBF | 功能描述:MOSFET N-Chan 55V 26 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRCZ34 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A) |
| IRCZ34-007 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 27A I(D) | TO-220VAR |
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