參數(shù)資料
型號: IR6216S
英文描述: PERIPHERAL DRIVER|1 DRIVER|MOS|SIP|5PIN|PLASTIC
中文描述: 外圍設(shè)備驅(qū)動程序| 1驅(qū)動器|馬鞍山|園區(qū)| 5PIN |塑料
文件頁數(shù): 1/5頁
文件大?。?/td> 99K
代理商: IR6216S
IR6210
(NOTE: For new designs, we
recommend IR’s new products IPS511 and IPS511S)
Data Sheet 60055-I
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Features
PWM current limit for short circuit protection
Over-temperature protection
Active output negative clamp
Reverse battery protection for logic circuit
Broken ground protection
Short to V
cc
protection
Low noise charge pump
Sleep mode supply current
4kV ESD protection on all leads
Logic ground isolated from power ground
General Description
The IR6210 is a 5 terminal monolithic high side switch with built
in short circuit, over- temperature, ESD protections, inductive
load turn off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting the
average current during short circuit if the drain current exceeds
5A. The protection circuit latches off the high side switch if the
junction temperature exceeds 170
o
C and latches on after the
junction temperature falls by 10
o
C. The Vcc (drain) to out
(source) voltage is actively clamped at 55V, improving its
performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating and
referenced to the source of the Power MOSFET. Thus the logic
to power ground isolation can be as high as 50V. This allows
operation with larger offset as well as controlling the switch
during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
Applications
Solenoid driver
Programmable logic controller
Truth Table
Condition
Normal
Normal
Output Open
Output Open
Shorted Output
Shorted Output
Over-Temperature
Over-Temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
H
L
L
L
Current-Limiting
PWM Mode
Dg
H
L
H
H
L
L
L
L
Block Diagram
Packages
OUT
GND
Vcc
5 Lead SMD220
5 Lead TO-220
V
cc(op)
5-50V
R
DS
(on)
200m
I
lim
5A
T
j(sd)
170
o
C
E
av
100mJ
Product summary
www.irf.com
1
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