參數(shù)資料
型號(hào): IR3312
廠商: International Rectifier
英文描述: PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
中文描述: 可編程電流傳感高端開關(guān)
文件頁數(shù): 3/12頁
文件大小: 322K
代理商: IR3312
IR3312(S)
WWW.IRF.COM
3
Symbol
Parameter
Min.
Typ.
Max. Units Test Conditions
Tdon
Turn-on delay time to Vcc-Vout= 0.9 Vcc
2
9
20
Tr1
Rise time to Vcc-Vout=5V
0.2
1
5
Tr2
Rise time to Vcc -Vout = 0.1Vcc
5
15
60
Eon
Turn ON energy
0.75
1.5
mJ
Tdoff
Turn-off delay to Vcc -Vout = 0.1Vcc
5
14
60
Tf
Fall time to Vcc-Vout = 0.9 Vcc
2
7
25
Eoff
Turn OFF energy
0.5
1
mJ
see figure 2
μ
s
see figure 3
μ
s
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 0.4
, T
j
= 25
o
C, (unless otherwise specified).
4) Input thresholds are measured directly between the input pin and the tab. Any parasitic resistance in common between the load
current path and the input signal path can significantly affect the thresholds.
5) Rds(on) is measured between the Tab and the Out pin, 5mm away from the package.
Protection Characteristics
Tj = 25
o
C (unless otherwise specified), RIfb = 500 to 5kOhm.
Symbol
Parameter
Min.
Typ.
Max. Units
Test Conditions
VIfb -Vin
@ Isd
Over-current shutdown threshold
4
165
50
33
36
30
37
9
12
200
500
0.5
1.2
4.5
5.4
V
°C
μ
S
V
A
A
μ
s
m
s
m
Vcc-Vin=-12V, Iload=5A
Tsd
Treset
OV
Isdf
Isd_1k
Min.Pulse
WAIT
Over-temp. shutdown threshold
Protection reset time
Over voltage shutdown (not latched)
Fixed over current shutdown
Adjustable over current shutdown 1K
Minimum pulse width (no WAIT state)
WAIT function timer
see Fig. 7
see Fig. 7
300
41
45
16
1200
3.5
VIfb<Vin
RIfb=1k
see Fig. 6
see Figs. 6 and 7
Rev.Rdson Rds(on) reverse battery protection
10
16
28
Static Electrical Characteristics
(Tj = 25
o
C, Vcc = 14V unless otherwise specified.)
Vout=12V
V
m
V
Symbol
Parameter
Min.
Typ.
Max. Units
Test Conditions
Iq
Total quiescent current (Iout +Ifb)
22
50
μ
A
Vcc-Vin=0, Vcc-
Vcc-VIfb=12V
Iin
Input current
1.5
4
6
mA
Vcc-Vin=14V
Vih
High level input threshold voltage (4)
5
5.5
Vil
Low level input threshold voltage (4)
3.5
4
Vhys
Input hysterisis = Vih-Vil
0.4
1
1.5
Iout qs
Output quiescent current
9
15
μ
A
Vcc-Vin=0; Vcc-VIfb=0;
Vcc-Vout=12V
Rds1 on
ON state resistance (5)
10
15
20
Iout=15A, Vcc-Vin=14V
Rds2 on
ON state resistance (5)
10
16
28
Iout=10A, Vcc -Vin=6V
Rds3 on
ON state resistance (5)
20
28.5
38
Iout=15A, Tj = 150
o
C
Vclamp1
Vcc to Vout active clamp voltage
33
35
Iout = 10mA
Vclamp2
Vcc to Vout active clamp voltage
36
40
Iout=30A,Vcc-VIfb<20V
Vsd
Body diode forward voltage
0.85
1
Iout=5A
Vaval.
Vcc to Vout avalanche voltage
40
43
50
Iout=100mA,Vcc-Vfb>35V
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