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參數(shù)資料
| 型號： | IPS0151STRR |
| 廠商： | International Rectifier |
| 英文描述： | SINGLE MOSFET DRIVER|MOS|SIP|3PIN|PLASTIC |
| 中文描述： | 單MOSFET驅(qū)動器|馬鞍山|園區(qū)| 3針|塑料 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 163K |
| 代理商： | IPS0151STRR |
IPS0151(S)
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application Notes.
Symbol Parameter
Rth 1
Thermal resistance free air
Rth 2
Thermal resistance junction to case
Rth 1
Thermal resistance with standard footprint
Rth 2
Thermal resistance with 1" square footprint
Rth 3
Thermal resistance junction to case
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vds (max)Continuous drain to source voltage
VIH
High level input voltage
VIL
Low level input voltage
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 60
o
C/W, Tj = 125
o
C) IPS0151
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C) IPS0151S
Rin
Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
Min.
—
—
—
—
—
Typ.
55
2
60
35
2
Max. Units Test Conditions
—
TO-220
—
—
—
Thermal Characteristics
D
2
PAK (SMD220)
o
C/W
Min.
—
4
0
Max. Units
35
6
0.5
—
—
0.2
—
0
4.3
3.8
5
1
1
k
μ
S
kHz
V
A
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
μ
m copper thickness.
Symbol Parameter
Vds
Maximum drain to source voltage
Vin
Maximum Input voltage
Iin, max
Maximum IN current
Isd
cont.
Min.
—
Max.
47
Units
Test Conditions
-0.3
7
-10
+10
mA
Diode max. continuous current
(1)
rth=62
o
C/W IPS0151
rth=5
o
C/W IPS015135
rth=80
o
C/W IPS0151S
Isd
pulsed
Diode max. pulsed current
(1)
Pd
—
2.8
TO220 free air
—
35
—
2.2
SMD220 Std footprint
—
45
Maximum power dissipation
(1)
(rth=62
o
C/W) IPS0151
(rth=80
o
C/W) IPS0151S
—
2
—
1.56
ESD1
Electrostatic discharge voltage
(Human Body)
—
4
C=100pF, R=1500
,
C=200pF, R=0
,
L=10
μ
H
ESD2
Electrostatic discharge voltage
(Machine Model)
—
0.5
T stor.
Tj max.
Tlead
Max. storage temperature
-55
150
Max. junction temperature
-40
+150
Lead temperature (soldering, 10 seconds)
—
300
V
W
A
TO220 with Rth=5
o
C/W
kV
o
C
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