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參數(shù)資料
| 型號(hào)： | IPP10N03L |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Red; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
| 中文描述： | 的OptiMOS降壓轉(zhuǎn)換器系列 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 452K |
| 代理商： | IPP10N03L |
2003-01-17
Page 2
IPP10N03L
IPB10N03L
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
R
thJC
R
thJA
-
0.9
1.4
K/W
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
62
40
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=60μA
Zero gate voltage drain current
V
(BR)DSS
30
-
-
V
V
GS(th)
1.2
1.6
2
V
DS
=30V,
V
GS
=0V,
T
j
=25°C
V
DS
=30V,
V
GS
=0V,
T
j
=175°C
Gate-source leakage current
I
DSS
-
-
0.01
10
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=4.5V,
I
D
=36A
V
GS
=4.5V,
I
D
=36A, SMD version
Drain-source on-state resistance
4)
R
DS(on)
-
-
9.9
9.5
13.4
13.1
m
V
GS
=10V,
I
D
=36A
V
GS
=10V,
I
D
=36A, SMD version
R
DS(on)
-
-
6.8
6.5
9.2
8.9
1Current limited by bondwire ; with an
R
thJC
= 1.4K/W the chip is able to carry
I
D
= 88A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IPB10N03L | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Red; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
| IPS04N03LA | OptiMOS 2 Power-Transistor |
| IPU04N03LA | OptiMOS 2 Power-Transistor |
| IPF04N03LA | OptiMOS 2 Power-Transistor |
| IPD04N03LA | OptiMOS 2 Power-Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPP10N03LB | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPP10N03LB G | 功能描述:MOSFET N-CH 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IPP10N03LBG | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPP10N03LBG_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS2 Power-Transistor |
| IPP10N03LBGXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220AB |
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