參數(shù)資料
型號(hào): IPI04N03LA
廠(chǎng)商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS 2 Power-Transistor
中文描述: 的OptiMOS 2功率晶體管
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 348K
代理商: IPI04N03LA
IPB04N03LA
IPI04N03LA, IPP04N03LA
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
N-channel
Logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
Superior thermal resistance
175 °C operating temperature
d
v
/d
t
rated
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
1)
80
A
T
C
=100 °C
80
Pulsed drain current
I
D,pulse
T
C
=25 °C
2)
385
Avalanche energy, single pulse
E
AS
I
D
=77 A,
R
GS
=25
290
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=80 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
3)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
107
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD version)
3.9
m
I
D
80
A
Product Summary
Type
Package
Ordering Code
Marking
IPB04N03LA
P-TO263-3-2
Q67042-S4181
04N03LA
IPI04N03LA
P-TO262-3-1
Q67042-S4183
04N03LA
IPP04N03LA
P-TO220-3-1
Q67042-S4182
04N03LA
P-TO220-3-1
P-TO262-3-1
P-TO263-3-2
Rev. 1.3
page 1
2003-12-18
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