參數(shù)資料
型號(hào): IPFH6N03LAG
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢2 Power-Transistor
中文描述: 的OptiMOS㈢2功率晶體管
文件頁數(shù): 6/12頁
文件大小: 428K
代理商: IPFH6N03LAG
IPDH6N03LA G IPFH6N03LA G
IPSH6N03LA G IPUH6N03LA G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=50 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
I
F
=f(
V
SD
)
parameter:
T
j
typ
98 %
0
2
4
6
8
10
12
-60
-20
20
60
100
140
180
T
j
[°C]
R
D
[
]
30 μA
300 μA
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T
j
[°C]
V
G
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
0
10
20
30
V
DS
[V]
C
25 °C
175 °C
25 °C, 98%
175 °C, 98%
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V
SD
[V]
I
F
Rev. 1.3
page 6
2006-05-11
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