參數(shù)資料
型號(hào): IPDH6N03LAG
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢2 Power-Transistor
中文描述: 的OptiMOS㈢2功率晶體管
文件頁(yè)數(shù): 7/12頁(yè)
文件大小: 428K
代理商: IPDH6N03LAG
IPDH6N03LA G IPFH6N03LA G
IPSH6N03LA G IPUH6N03LA G
13 Avalanche characteristics
14 Typ. gate charge
I
AS
=f(
t
AV
);
R
GS
=25
V
GS
=f(
Q
gate
);
I
D
=25 A pulsed
parameter: T
j(start)
parameter:
V
DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
5 V
15 V
20 V
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Q
gate
[nC]
V
G
20
21
23
24
26
27
28
30
-60
-20
20
60
100
140
180
T
j
[°C]
V
B
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
1
10
100
1
10
100
1000
t
AV
[μs]
I
A
Rev. 1.3
page 7
2006-05-11
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