參數(shù)資料
型號(hào)： IPD04N03LA
廠商： INFINEON TECHNOLOGIES AG
英文描述： OptiMOS 2 Power-Transistor
中文描述： 的OptiMOS 2功率晶體管
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 434K
代理商： IPD04N03LA
IPD04N03LA IPF04N03LA
IPS04N03LA IPU04N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.3
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
75
6 cm
2
cooling area
5)
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
25
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=80 μA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V,
I
D
=50 A
-
4.8
5.9
m
V
GS
=4.5 V,
I
D
=50 A,
SMD version
-
4.6
5.7
V
GS
=10 V,
I
D
=50 A
-
3.4
4.0
V
GS
=10 V,
I
D
=50 A,
SMD version
-
3.2
3.8
Gate resistance
R
G
-
1.3
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=50 A
48
96
-
S
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Values
2)
Current is limited by bondwire; with an
R
thJC
=1.3 K/W the chip is able to carry 136 A.
3)
See figure 3
4)
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
1)
J-STD20 and JESD22
Rev. 1.8
page 2
2004-05-19
相關(guān)PDF資料
PDF描述
IPS06N03LA Circular Connector; No. of Contacts:61; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:24; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:24-61
IPU06N03LA Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:3; Connector Shell Size:8; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:8-33
IPS13N03LA Flat / Ribbon Cable; Number of Conductors:60; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyvinylchloride (PVC); Approval Bodies:UL, CSA; Capacitance:50pF RoHS Compliant: Yes
IPU09N03LA OptiMOS 2 Power-Transistor
IPS09N03LA OptiMOS 2 Power-Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IPD04N03LA G 功能描述:MOSFET N-CH 25V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPD04N03LAG 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor
IPD04N03LAGXT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(2+Tab) TO-252
IPD04N03LB G 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IPD04N03LBG 制造商:Infineon Technologies AG 功能描述:SP000016409_POWER MOS_TR_RO EOL310709
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