參數(shù)資料
型號(hào): INT200PFI2
廠(chǎng)商: POWER INTEGRATIONS INC
元件分類(lèi): 功率晶體管
英文描述: Low-side Drive and High-side Control with Simultaneous Conduction Lockout
中文描述: 0.3 A BUF OR INV BASED MOSFET DRIVER, PDIP8
封裝: PLASTIC, DIP-8
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 95K
代理商: INT200PFI2
INT200
F
1/96
4
General Circuit Operation
One phase of a three-phase brushless
DC motor drive circuit is shown in Figure
4 to illustrate an application of the
INT200/201. The LS IN signal directly
controls MOSFET Q1. The
HS IN
signal
causes the INT200 to command the
INT201 to turn MOSFET Q2 on or off as
required. The INT200 will ignore input
signals that would command both Q1
and Q2 to conduct simultaneously,
protecting against shorting the HV+ bus
to HV-.
Local bypassing for the low-side driver
is provided by C1. Bootstrap bias for the
high-side driver is provided by D1 and
C2. Slew rate and effects of parasitic
oscillations in the load waveforms are
controlled by resistors R1 and R2.
The inputs are designed to be compatible
with 5 V CMOS logic levels and should
not be connected to V
. Normal CMOS
power supply sequencing should be
observed. The order of signal application
should be V
, logic signals, and then
HV+. V
should be supplied from a
low impedance voltage source.
The length of time that the high-side can
remain on is limited by the size of the
bootstrap capacitor. Applications with
extremely long high-side on times
require special techniques discussed in
AN-10.
Figure 6. Using the INT200 and INT201 to Drive a Fluorescent Lamp.
PI-1462-042695
HV+
VDD
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
INT201
INT200
OSCILLATOR
FLUORESCENT
LAMP
HV-
Maximum frequency of operation is
limited by power dissipation due to high-
voltage switching, gate charge, and bias
power. Figure 5 indicates the maximum
switching frequency as a function of
input voltage and gate charge. For higher
ambient temperatures, the switching
frequency should be derated linearly.
Figure 5. Switching Frequency versus Gate Charge for a) PDIP and b) SOIC.
100
0
0
100
200
Gate Charge (nC)
S
200
300
400
P
VIN = 200 V
VIN = 300 V
VIN = 400 V
SOIC
100
0
0
100
200
Gate Charge (nC)
S
200
300
400
P
VIN = 200 V
VIN = 300 V
VIN = 400 V
PDIP
相關(guān)PDF資料
PDF描述
INT200TFI1 Low-side Drive and High-side Control with Simultaneous Conduction Lockout
INT200TFI2 Low-side Drive and High-side Control with Simultaneous Conduction Lockout
INT201 Floating Inputs Floating High-side Drive
INT201PF1 High-side Driver IC
INT201PFI Floating Inputs Floating High-side Drive
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
INT200TFI1 制造商:POWERINT 制造商全稱(chēng):Power Integrations, Inc. 功能描述:Low-side Drive and High-side Control with Simultaneous Conduction Lockout
INT200TFI2 制造商:POWERINT 制造商全稱(chēng):Power Integrations, Inc. 功能描述:Low-side Drive and High-side Control with Simultaneous Conduction Lockout
INT201 制造商:POWERINT 制造商全稱(chēng):Power Integrations, Inc. 功能描述:Floating Inputs Floating High-side Drive
INT201PF1 制造商:POWERINT 制造商全稱(chēng):Power Integrations, Inc. 功能描述:High-side Driver IC
INT201PFI 制造商:POWERINT 制造商全稱(chēng):Power Integrations, Inc. 功能描述:High-side Driver IC